Workshop / November 11, 2025 - November 12, 2025

International Workshop on Magnetron Sputter Epitaxy 2025

Welcome!

The aim of this workshop, which was held in 2021 for the first time, is to provide a forum for presenting recent results in the field of magnetron sputter epitaxy and exchanging novel ideas and concepts. Moreover, the workshop will also present an opportunity for the diverse scientific community that is using and actively developing magnetron sputter epitaxy techniques to meet and form a stronger collaborative network.

We are looking forward to welcoming you!

Registration

The registration is free of charge.

Event details

Location

online
The workshop will be held online, a link will be distributed to the registered participants.

Date

November 11, 2025 - November 12, 2025

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Program

Our plenary speaker this year is Dr. Thomas Tschirky, Senior scientist at Evatec AG.

Title of his talk:

Magnetron Sputter Epitaxy for High Volume Manufacturing

Abstract:

Magnetron Sputter Epitaxy (MSE) has evolved beyond the confines of laboratory-scale research and is now poised for deployment in high-volume manufacturing. Modern industrial deposition systems are capable of delivering the demanding process conditions required for uniform MSE across large-diameter wafers. Innovative source designs are further expanding the material scope of wafer-scale MSE, opening new frontiers in thin film growth. This presentation will highlight recent advancements in Evatec’s MSE technology portfolio, showcasing results across a range of material systems and demonstrating the readiness of MSE for industrial-scale applications.

Program Day 1 – 11.11.2025

	Title	Speaker	Affiliation
13:00	Opening remarks, tech check	A. Žukauskaitė	Fraunhofer FEP
	Session 1	Session Chair A. Žukauskaitė
13:05	Magnetron Sputter Epitaxy for High Volume Manufacturing	Dr. Thomas Tschirky	Evatec AG (Switzerland)
13:45	Nanoscopic insights into epitaxial III- nitride thin films	Dr. Niklas Wolff	Kiel University CAU (Germany)
14:05	III-Nitride Magnetron Sputter Epitaxy on 200mm substrates for power device applications	Dr. Valentin Garbe*, M. Ott, B. Haude, A. Žukauskaitė, J. Neidhardt, E. von Hauff	* Fraunhofer Institute for Electron Beam and Plasma Technology FEP (Germany)
14:25	Integrating AlN and heteroepitaxial diamond	Dr. Jürgen Weippert*, L. Kirste, V. Lebedev, Ch. Manz, S Müller, M. Prescher, S. Leone, M. Raghuwanshi, B. Sundarapandian, T. Fehrenbach, M. Ohnemus, Ch. Wild	* Fraunhofer Institute for Applied Solid State Physics IAF, (Germany), Silicon Austrial Labs GmbH (Austria), Diamond Materials GmbH (Germany)
14:45	Coffee Break
	Session 2	Session Chair V. Garbe
15:00	Utilizing gas rarefaction to optimize preferential metal ion acceleration for epitaxial AlN growth on silicon	Behravan Nastaran*, A. Farhadizadeh, T. Pitonakova, T. Terzic, D. Solonenko, D. Lundin	* Silicon Austria Labs GmbH (Austria), * Linköping University (Sweden), Masaryk University (Czech Republic), Otto von Guericke University Magdeburg OvGU (Germany)
15:20	How to reduce optical loss in AlN thin films using magnetron sputter epitaxy?	Dr. Mohit Raghuwanshi*, B Sundarapandian, L Kirste, P. Strănák, M. Prescher, R. Singh, R. Thomas, S. Suckow, and M. Lemme	* Fraunhofer Institute for Applied Solid State Physics IAF (Germany), AMO GmbH (Germany)
15:40	In-situ growth monitoring of AlN and GaN in sputter epitaxy	Dr. Florian Hörich, R. Borgmann, J. Bläsing, G. Schmidt, P. Veit, F. Bertram, J. Christen, A. Strittmatter, A. Dadgar	Otto von Guericke University Magdeburg OvGU (Germany)
16:00	Reactive High-Temperature Annealing of Sputtered AlN on Sapphire under Nitrogen, Ammonia and Carbon Monoxide Atmospheres	Karl Kreuzer	Nitride Technology Center NTC, Institute of Semiconductor Technology, TU Braunschweig (Germany)
16:20	Magnetron Sputter Epitaxy of AlN and GaN: progress in scaling and crystalline quality	Morris Ott*, B. Haude, Z. Wei, K. Kreuzer, C. Margenfeld, P. Stranak, M. Hinterstein, K. Pingen, A. Hinz, A. Žukauskaitė, J. Neidhardt, E. v. Hauff, V. Garbe	* Fraunhofer Institute for Electron Beam and Plasma Technology FEP (Germany), TU Dresden (Germany)
16:40	Sputter Beam Epitaxy method for low energy thin film deposition	Dr. Adam Hauser	University of Alabama (USA)
17:00	Closing, Day 1	Session Chairs	Fraunhofer FEP

Program Day 2 – 12.11.2025

	Title	Speaker	Affiliation
08:30	Opening remarks, tech check	A. Žukauskaitė	Fraunhofer FEP
	Session 3	Session Chair A. Žukauskaitė
08:35	UHV Sputtering for Interface-Critical Applications	Dr. Sabina Hatch	DCA Instruments (Finland)
08:55	CrB2/TiB2 superlattice neutron mirrors with abrupt interfaces by monolayer-controlled growth kinetics during magnetron sputter epitaxy	S. Dorri, O. Nyqvist, J. Palisaitis, A. Vorobiev, A. Devishvili, P. Sandström, P.O.Å. Persson, N. Ghafoor, F. Eriksson, Prof. Jens Birch*	Linköping University (Sweden)
09:15	Epitaxial thin films of altermagnetic CrSb(0001) grown by dc magnetron co-sputtering	Dr. Satya Prakash Bommanaboyena	Institute of Physics FZU (Czech Republic)
09:35	Quantitative Model for Low Temperature Sputter Deposition on Porous Substrates	Shaul Pagis-Sharon*, N.L. Raveendran, M. Leshem , O. Sinai , E. Segal , Y. Calahorra	* Techion IIT (Israel), Israeli Center for Advanced Photonics
09:55	Epitaxial Growth of ZrN on Si(111)	Muthukani Kathiresan	Otto von Guericke University Magdeburg OvGU (Germany)
10:15	Coffee Break
	Session 4	Session Chair V. Garbe
10:30	Epitaxial Growth and Structural Phase Evolution of Ti₁₋ₓAlₓN on Si(111) Using TiN and AlN Buffer Layers	Emine Kaynar	Otto von Guericke University Magdeburg OvGU (Germany)
10:50	Strategy to obtain epitaxial aluminum scandium nitride	Dr. Balasubramanian Sundarapandian	Silicon Austria Labs GmbH (Austria)
11:10	AlScN/GaN and AlN/GaN - Sputter Epitaxy and Ferroelectricity	Dr. Georg Schönweger	Kiel University CAU (Germany)
11:30	Sputter-deposited Epitaxial WO3 Thin Films: Promising Transparent Bottom Electrodes for Next-Gen Security and Neural Network applications	Dr. Babak Bakhit	University of Cambridge (UK)
11:50	Closing remarks, Group photo	Session Chairs (A. Žukauskaitė/V. Garbe)	Fraunhofer FEP