| DAY |
TIME |
TITLE |
SPEAKER |
AFFILIATION |
| 19.10.2023 |
12:45 - 13:00 |
Meeting opened and Tech-Check |
Dr. Agnė Žukauskaitė |
Fraunhofer Institute for Organic Electronics Electron Beam and Plasma Technology FEP / TU Dresden, Germany |
| 13:00 - 13:05 |
Opening remarks |
| 13:05 - 13:45 |
Epitaxial thin film growth using HiPIMS |
Dr. Daniel Lundin |
Linköping University (LiU), Sweden |
| 13:45 - 14:05 |
Epitaxial growth of molybdenum oxides grown by magnetron sputtering |
Faezeh A.F.Lahiji |
Linköping University (LiU), Sweden |
| 14:05 - 14:25 |
Thickness scaling and ferroelectric domains in epitaxial AlScN thin films |
Dr. Simon Fichtner |
Fraunhofer Institute for Silicon Technology ISIT, Germany |
| 14:25 - 15:25 |
XRD on thin films or: Are you more than your FWHM? |
Lars Grieger |
Malvern Panalytical B.V., The Netherlands |
| 15:25 - 15:40 |
Break |
| 15:40 - 16:00 |
MSE of CrB2/TiB2 superlattice thin films |
Samira Dorri |
Linköping University (LiU), Sweden |
| 16:00 - 16:20 |
Reactive Magnetron Sputtering of Epitaxial Titanium Nitride Carbide Superlattices |
Moishe (Elie) Azoff-Slifstein |
Rensselaer Polytechnic Institute (RPI), USA |
| 16:20 - 16:40 |
Growth of epitaxial films of magnetic oxides by off-axis sputtering |
Larry Scipioni |
PVD Products, Inc. |
| 16:40 - 17:00 |
Significance of epitaxial growth to achieve high Q AlScN-on-Si resonators for timing applications |
Dr. Roozbeh Tabrizian |
University of Florida, USA |
| 17:00 - 17:15 |
Closing Remarks |
|
|
| 20.10.2023 |
7:45 - 08:00 |
Meeting opened and Tech-Check |
Dr. Alexander Hinz |
Fraunhofer Institute for Organic Electronics Electron Beam and Plasma Technology FEP / TU Dresden, Germany |
| 08:00 - 08:05 |
Opening remarks |
| 08:05 - 08:45 |
Sputter epitaxy of AlN for UV LED base layers |
Dr. Sylvia Hagedorn |
Ferdinand-Braun-Institut (FBH), Germany |
| 08:45 - 09:05 |
n-type doping of GaN via co-sputtering |
Florian Hörich |
Otto-von-Guericke University Magdeburg, Germany |
| 09:05 - 09:25 |
HfN as conductive buffer for GaN epitaxy |
Christopher Lüttich |
Otto-von-Guericke University Magdeburg, Germany |
| 09:25 - 09:45 |
Controlling stress behaviour of sputtered a-plane Al1-xScxN films |
Akash Nair |
Fraunhofer Institute for Applied Solid State Physics IAF, Germany |
| 09:45 - 10:00 |
Break |
| 10:00 - 10:20 |
Influence of the reactive working point on the quality of AlN grown by MSE |
Dr. Alexander Hinz |
Fraunhofer Institute for Organic Electronics Electron Beam and Plasma Technology FEP / TU Dresden, Germany |
| 10:20 - 10:40 |
Impact of Al seed layer on morphology, crystal quality and polarity of GaN/AlN/Si(111) grown by magnetron sputter epitaxy |
Katrin Pingen |
Fraunhofer Institute for Organic Electronics Electron Beam and Plasma Technology FEP, Germany |
| 10:40 - 11:00 |
Polarity Control of GaN and AlN Thin Films by All Sputtering Process. |
Dr. Takahiro Nagata |
National Institute for Materials Science (NIMS), Japan |
| 11:00 - 11:40 |
Impact of Oxygen Concentration on Polarity of Face-to-Face Annealed Sputtered AlN |
Prof. Kanako Shojiki |
Kyoto University, Japan |
| 11:40 - 12:00 |
Preparation and Interface Evaluation of 4-Layer Polarity-Inverted AlN Thin Film by Sputtering and Annealing |
Tomohiro Tamano |
Mie University, Japan |
| 12:00 - 12:20 |
Late news: Influence of temperature on the film properties of AlN prepared by magnetron sputter epitaxy |
Balasubramanian Sundarapandian |
Fraunhofer Institute for Applied Solid State Physics IAF, Germany |
| 12:20 - 12:25 |
Closing remarks |
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP