Day 1 | Monday, November 28, 2022 |
| 07.45 |
MS Teams call is opened
|
| 07.45 – 07.55 |
Tech check with speakers |
| 08.00 |
Opening remarks |
| Session 1: News from Japan and then some | Chair: Dr. Alexander M. Hinz |
| 08.05 |
Prof Kenjiro Uesugi, Mie University, Japan
"Sputtering epitaxy of AlN on sapphire and high-temperature thermal treatment" |
| 08.50 |
Prof Hiroshi Fujioka, University of Tokyo, Japan
"Basic characteristics and device applications of GaN epitaxial films prepared by pulsed sputtering" [2 x 15 min + 5 min discussion] |
| 09.25 |
Prof Naho Itagaki, Kyushu University, Japan
"Sputtering Growth of Single-Crystalline ZnO Based Semiconducting Films on Large Lattice-Mismatched Substrates" |
| 09.45 |
Prof Shinya Yoshida, Shibaura Institute of Technology, Japan
"Sputter Deposition of PZT Epitaxial Thin Film for High Performance Piezoelectric Micromachined Ultrasonic Transducer" |
| 10.05 |
Dr Jürgen Weippert, Fraunhofer IAF, Germany
"Achieving homogeneity in the growth of Yttria-Stabilized Zirconia (YSZ) films at high temperatures" |
10.25
|
Break |
| Session 2: Industry News | Chair: Dr. Alexander M. Hinz |
| 10.40 |
Dr Jana Ligl, Evatec AG, Switzerland
"Growth of epitaxial AlN on Si(111) using volume production equipment" |
| 11.00 |
Tami Israeli, Polyteknik AS
"Flextura PVD as an Epitaxial Growth Platform" |
| 11.20 |
Joachim Rest, LayTec
"Curvature measurement and stress determination by optical coatings deposition" |
| 11.40 |
Dr Alexander M. Hinz, Fraunhofer FEP, Germany
"Magnetron Sputter Epitaxy: Challenges towards commercialisation" |
12.00 – 12.05
|
Closing |
Day 2 | Tuesday, November 29, 2022 |
| 12.45 |
MS Teams call is opened |
| 12.45 – 12.55 |
Tech check with speakers |
| 13.00 |
Opening remarks |
| Session 1: Nitride material | Chair: Dr. Agnė Žukauskaitė |
| 13.05 |
Prof Jens Birch, Linköping University, Sweden
"Magnetron Sputter Epitaxy: More than Group III Nitride Epitaxy" |
| 13.50 |
Prof Gregory Abadias, CNRS, University of Poitiers, France
"Magnetron sputter epitaxy of transition metal nitride layers and their physical properties" |
| 14.10 |
Jui-Che Chang, Linköping University, Sweden
"Metastable Ta3N5 thin film grown on c-plane sapphire substrate by magnetron sputter epitaxy" |
| 14.30 |
Smita Gangaprasad Rao, Linköping University, Sweden
"(Magnetron-sputter) Epitaxial growth of Cantor nitrides" |
| 14.50 |
Break |
| Session 2: Group III-nitrides | Chair: Dr. Agnė Žukauskaitė |
| 15.05 |
Dr Ralf Borgmann, Otto von Guericke University Magdeburg, Germany
"Buffer layer growth of AlGaN and GaN on Si(111) by pulsed sputter epitaxy" |
| 15.25 |
Katrin Pingen, Fraunhofer FEP, Germany
"Magnetron Sputter Epitaxy of AlN on off-cut Si(111) substrates" |
| 15.45 |
Florian Hörich, Otto von Guericke University Magdeburg, Germany
"Reactive sputter epitaxy of ScN and AlScN on Si(111)” |
| 16.05 |
Georg Schönweger, Fraunhofer ISIT, Germany
“Structural and ferroelectric properties of AlScN deposited by sputter-epitaxy” |
| 16.25 |
Balasubramanian Sundarapandian, Fraunhofer IAF, Germany
"Al0.7Sc0.3N prepared by magnetron sputter epitaxy on AlN/Si(111) and Mo(110)/AlN (0001)/Si(111) seed layers" |
| 16.45 |
Dr. Brooks Tellekamp, National Renewable Energy Laboratory, USA
“Sputter deposition of TaC virtual substrates for AlGaN heteroepitaxy”
|
| 17.05 – 17.10 |
Closing remarks and a group picture |
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP